Aktive basic

At the n-channel metal oxide transistor the gate is separated by an oxide layer from the source drain channel, so that it has a high resistance. The current is again controlled by the voltage at the gate. There are different MOSFETs, we have here an enhancement type n-channel MOSFET, which becomes conductive with positive voltage, at 0V (and less) it blocks.

P-MOS Transistor mit Vorschalt Transistor BC 817. Durch den Vorschalttransistor kann die Ansteuerung mit 0-5V PWM oder ON / OFF Signal direkt mit dem Bewegungsmelder angesteuert werden. P-MOS Transistor Leistungsdaten: maximal 60V 18A. Kann im Bricksystem mit maximal 12A betrieben werden (Kontakte max. 6A pro Kontakt). Achtung im Brick geringe Kühlfläche, vor thermischer Überlastung schützen.

In the n-channel JFET (junction FET) the current through the source drain channel is controlled by the voltage at the gate. For the n-channel JFET this is negative voltage. If the voltage becomes positive, then a current flow through the gate source diode channel. The n-JFET is conductive without voltage, with negative voltage it starts blocking.

P-MOS transistor with upstream connection transistor BC 817. Via the upstream connection transistor, controlling can be done with 0-5V PWM or ON / OFF signal via Bluetooth, Arduino or Banana brick. P-MOS transistor technical data: max. 50V, 75A In the brick system the transistor has a maximum of 12A (max. 6A per pin). Careful: the brick has a low cooling surface, protect from thermal overload.

Works like a normal npn transistor, in addition the gate via a lens open to the outside. In this way the current through emitter collector channel can also be controlled by light.

Unser Feldeffekt-Transistor steuert den Stromfluss zwischen Drain und Source über die am Gate angelegte Spannung. Das Besondere an diesem Bauelement ist, dass die Verbindung zwischen Gate und Source sehr hochohmig ist. Feldeffekttransistoren werden als „MOSFET“ (Metall-Oxid-Semileitender Feldeffekt-Transistor) bezeichnet oder kurz als „MOS“. Es gibt unterschiedliche Arten von MOS, dieser ist ein normal sperrender n-Kanal. Dies bedeutet, dass die Schwellspannung am Gate (Tor) anliegen muss, damit ein Stromfluss zwischen Drain (Abfluss) und Source (Quelle) erfahren wird. Die Spannung muss am Gate positiv zur Source sein. Der MOSFET kann bis zu 30V Source - Drain- Spannung vertragen und einen Spitzenstrom von 30A (nicht beides gleichzeitig versteht sich). Achtung. Die Kontakte des Brickssystems vertragen maximal 6.3A pro Kontakt.

PUT stands for Programmable Unijunction Transistor. The gate connects anode and cathode, which are at the first and last p-n-doped layer. The PUT includes three p-n junctions, a normal unijunction transistor only one. With PUTs you can easily build oscillator circuits.

The germanium diode allows current flow only in one direction, the conducting direction. The other direction is the reverse direction; if the diode is connected in this direction, then no current is flowing. The germanium diode is based on the semi-conductor material germanium, and has particularly favorable properties as rectifier for radios. The special thing is the so-called threshold voltage, which is very low.

The capacity diode is not just a normal diode, it also provides in reverse direction an electrically controllable capacity. You can use it for instance in oscillator circuits or in other HF circuits.

The performance silicon diode allows current flow only in one direction, the conducting direction. The other direction is the reverse direction; if the diode is connected in this direction, then no current is flowing.

In the transistor the current flow between emitter and collector is controlled by a smaller current flow between emitter and gate. For the npn version at the gate as opposed to the emitter positive voltage must be applied.

In the transistor the current flow between emitter and collector is controlled by a smaller current flow between emitter and gate. For the npn version at the gate as opposed to the emitter positive voltage must be applied.

The silicon diode 1N4148 enables the current flow in one direction. The other direction is the inverse direction. If the diode is connected in this direction there is no current flow. It is often used for switch applications.

The photo diode responds to light: its voltage varies depending on brightness. In more light they become permeable.

In the transistor the current flow between emitter and collector is controlled by a smaller current flow between emitter and gate. For the npn version at the gate as opposed to the emitter positive voltage must be applied.

If a normal diode is used in reverse direction, then at first no current flows. When reaching a certain voltage the diode breaks through and current is again flowing. For the Zener diode this avalanche voltage is especially raised and exactly defined (the so-called Zener voltage), which is marked on the label of the diode.